In copper and other face centered cubic metals, high-energy particle irradiation produces hardening and shear localization. Post-irradiation microstructural examination in Cu reveals that irradiation has produced a high number density of nanometer sized stacking fault tetrahedra. The resultant irradiation hardening and shear localization is commonly attributed to the interaction between stacking fault tetrahedra and mobile dislocations, although the mechanism of this interaction is unknown. In this work, we present results from a molecular dynamics simulation study to characterize the motion and velocity of edge dislocations at high strain rate and the interaction and fate of the moving edge dislocation with stacking fault tetrahedra in Cu using an EAM interatomic potential. The results show that a perfect SFT acts as a hard obstacle for dislocation motion and, although the SFT is sheared by the dislocation passage, it remains largely intact. However, our simulations show that an overlapping, truncated SFT is absorbed by the passage of an edge dislocation, resulting in dislocation climb and the formation of a pair of less mobile super-jogs on the dislocation.
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July 2002
Technical Papers
Dislocation-Stacking Fault Tetrahedron Interactions in Cu
B. D. Wirth,
B. D. Wirth
Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550
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V. V. Bulatov,
V. V. Bulatov
Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550
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T. Diaz de la Rubia
T. Diaz de la Rubia
Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550
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B. D. Wirth
Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550
V. V. Bulatov
Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550
T. Diaz de la Rubia
Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550
Contributed by the Materials Division for publication in the JOURNAL OF ENGINEERING MATERIALS AND TECHNOLOGY. Manuscript received by the Materials Division November 2, 2001; revised manuscript received March 6, 2002. Guest Editors: Tariq A. Khraishi and Hussein M. Zbib.
J. Eng. Mater. Technol. Jul 2002, 124(3): 329-334 (6 pages)
Published Online: June 10, 2002
Article history
Received:
November 2, 2001
Revised:
March 6, 2002
Online:
June 10, 2002
Citation
Wirth, B. D., Bulatov , V. V., and de la Rubia, T. D. (June 10, 2002). "Dislocation-Stacking Fault Tetrahedron Interactions in Cu ." ASME. J. Eng. Mater. Technol. July 2002; 124(3): 329–334. https://doi.org/10.1115/1.1479692
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