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Keywords: silicon
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Journal Articles
Publisher: ASME
Article Type: Research-Article
J. Heat Mass Transfer. March 2014, 136(3): 032401.
Paper No: HT-13-1067
Published Online: November 21, 2013
.... Editor: Zhuomin Zhang. 05 02 2013 04 10 2013 Using a silicon nitride cantilever with an integral silicon tip and a microfabricated platinum–carbon resistance thermometer located close to the tip, a method is developed to concurrently measure both the heat transfer through...
Journal Articles
Publisher: ASME
Article Type: Research-Article
J. Heat Mass Transfer. December 2013, 135(12): 121501.
Paper No: HT-12-1308
Published Online: September 27, 2013
... copper silicon highly wetting cylindrical cavity The pool boiling heat transfer characteristics of smooth single crystal and densely packed cylindrical cavity surfaces were investigated using two highly wetting fluids, perfluoro-n-hexane (FC-72) and n-hexane. Three single crystal copper surfaces...
Journal Articles
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. May 2012, 134(5): 051007.
Published Online: April 13, 2012
...David Lacroix; Karl Joulain; Jerome Muller; Gilles Parent This study deals with phonon heat transport in silicon nanowires. A review of various methods that can be used to assess thermal conductance of such nanodevices is presented. Here, a specific attention is paid to the case of the Landauer...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. April 2012, 134(4): 042403.
Published Online: February 14, 2012
... single frequency excitations consisting of superposed spatial modes. These mode shapes are used to excite the waveguide inlet boundary so that single phonon modes are generated in the structure. Mode shapes and phonon spectra for a silicon planar waveguide with rigid wall boundaries are calculated...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. April 2012, 134(4): 042402.
Published Online: February 13, 2012
... by stretching the pulse can be predicted well using the TTM. In this study, we employ TTR techniques to investigate interface heat transfer for thin gold films of varying thicknesses on silicon substrates. (Here, we consider silicon as a dielectric since heat is carried by phonons in silicon.) Similar...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. December 2011, 133(12): 122401.
Published Online: October 5, 2011
... volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce...
Journal Articles
Publisher: ASME
Article Type: Technical Briefs
J. Heat Mass Transfer. November 2011, 133(11): 114502.
Published Online: September 20, 2011
... matrix for each polarization. A decomposed self-energy is calculated from the density of states matrix for each polarization and used to calculate the transmission function for a particular phonon branch. In a pure bulk material such as silicon, each transmission function exhibits a frequency-independent...
Journal Articles
Publisher: ASME
Article Type: Photo Gallery
J. Heat Mass Transfer. August 2011, 133(8): 080903.
Published Online: April 27, 2011
...Nenad Miljkovic; Ryan Enright; Shalabh C. Maroo; H. Jeremy Cho; Evelyn N. Wang capillarity drops elemental semiconductors evaporation flow visualisation hydrophilicity hydrophobicity nanostructured materials scanning electron microscopy silicon surface tension two-phase flow...
Journal Articles
Publisher: ASME
Article Type: Technical Briefs
J. Heat Mass Transfer. July 2011, 133(7): 074501.
Published Online: April 4, 2011
... method phonons silicon thermal conductivity thermal boundary conductance phonon classical limit silicon germanium diffuse mismatch model molecular dynamics The phonon thermal boundary conductance between two solids, h , has been an active area of research due to its...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. May 2011, 133(5): 052902.
Published Online: February 3, 2011
... transfer performance of pool boiling systems is not adequate to match the cooling ability provided by enhanced microchannels operating under single-phase conditions. The objective of this work is to evaluate the pool boiling performance of structured surface features etched on a silicon chip...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. October 2010, 132(10): 102403.
Published Online: July 27, 2010
... thickness increases. Dispersion relation for materials A (silicon) and B (germanium) in the [001] direction Figure 4 shows a series of snapshots of an LA wave packet with k 0 = 0.1 ( 2 π / a ) and f = 1.34   THz propagating through interface. After...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. October 2010, 132(10): 102401.
Published Online: July 23, 2010
... solving the BTE in space and time subject to different boundary and initial conditions. We apply our hierarchical model to estimate the silicon out-of-plane thermal conductivity and the thermal response of an silicon on insulator (SOI) device subject to Joule heating. We have found that relative phonon...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. August 2010, 132(8): 082401.
Published Online: June 4, 2010
... duration is smaller than the relaxation time of the carriers or phonons or when the carriers’ or phonons’ mean free path is larger than the material dimension, these macroscopic models fail to capture the physics accurately. In this article, the nonequilibrium between carriers and phonons in silicon films...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. July 2010, 132(7): 072403.
Published Online: April 29, 2010
... gas, which is approximately two orders of magnitude larger than the relaxation time adopted in the CV-wave model for the lattices. A numerical example for fast transient heat conduction in a silicon film is presented to show that the temperature peaks resulting from the thermomass model are much...
Journal Articles
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. May 2010, 132(5): 052402.
Published Online: March 8, 2010
... phonons modes, especially at room temperature, where optical modes are found to carry about 25% of the energy at steady state in silicon thin films. Most importantly, it is found that inclusion of optical phonons results in better match with experimental observations for silicon thin-film thermal...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. February 2010, 132(2): 023302.
Published Online: November 30, 2009
...S. Basu; B. J. Lee; Z. M. Zhang This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping level, polarization...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. February 2010, 132(2): 023301.
Published Online: November 30, 2009
... spectra infrared spectra ion implantation ionisation phosphorus rapid thermal annealing reflectivity semiconductor doping semiconductor thin films silicon microscale doped silicon radiative properties thin films Doped Si is extensively used in the semiconductor...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. January 2010, 132(1): 012401.
Published Online: October 22, 2009
...Javier V. Goicochea; Marcela Madrid; Cristina Amon Molecular dynamics simulations are performed to estimate acoustical and optical phonon relaxation times, dispersion relations, group velocities, and specific heat of silicon needed to solve the Boltzmann transport equation (BTE) at 300 K and 1000 K...