The problem of self-heating in microelectronic devices has begun to emerge as a bottleneck to device performance. Published models for phonon transport in microelectronics have used a gray Boltzmann transport equation (BTE) and do not account adequately for phonon dispersion or polarization. In this study, the problem of a hot spot in a submicron silicon-on-insulator transistor is addressed. A model based on the BTE incorporating full phonon dispersion effects is used. A structured finite volume approach is used to solve the BTE. The results from the full phonon dispersion model are compared to those obtained using a Fourier diffusion model. Comparisons are also made to previously published BTE models employing gray and semi-gray approximations. Significant differences are found in the maximum hot spot temperature predicted by the different models. Fourier diffusion underpredicts the hot spot temperature by as much as 350% with respect to predictions from the full phonon dispersion model. For the full phonon dispersion model, the longitudinal acoustic modes are found to carry a majority of the energy flux. The importance of accounting for phonon dispersion and polarization effects is clearly demonstrated.
Issue Section:
Micro/Nanoscale Heat Transfer
Keywords:
heat conduction,
silicon-on-insulator,
transistors,
Boltzmann equation,
phonon dispersion relations,
finite volume methods,
thermal conductivity,
Computations,
BTE,
Finite Volume Method,
SOI Transistors,
Phonons,
Phonon Dispersion,
Phonon Polarization,
Micro/Nano Scale Heat Conduction,
Hot Spot
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