The transient reflectivity of a continuous wave (CW) HeNe laser was measured during the pulsed excimer laser heating of thin polysilicon films at the nanosecond time scale. Polysilicon films with thicknesses from 0.1 to 0.4 μm were deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) on thermally oxidized crystalline silicon wafers. The complex refractive index of these films at the HeNe laser wavelength (λprobe = 0.6328 μm) was measured in the temperature range from 300 K to approximately 1400 K by combined ellipsometric and normal incidence reflectivity measurements. Numerical heat transfer and optical reflectivity analysis based on the measured optical properties of polysilicon films were conducted. The calculated reflectivity histories were compared with the experimental results to reveal the transient temperature field.
Issue Section:
Heat Conduction
1.
Aspnes
D. E.
1982
, “Optical Properties of Thin Films
,” Thin Solid Films
, Vol. 89
, pp. 249
–262
.2.
Bagley
B. G.
Aspnes
D. E.
Adams
A. C.
Mogab
C. J.
1981
, “Optical Properties of Low-Pressure Chemically Vapor Deposited Silicon Over the Energy Range 3.0-6.0 eV
,” Applied Physics Letters
, Vol. 38
, No. 1
, pp. 56
–58
.3.
Born, M., and Wolf, W., 1980, Principles of Optics, 6th ed., Pergamon, Exeter, pp. 55–60, 611–624.
4.
Graebner
J. E.
Jin
S.
Kammlott
G. W.
Herb
J. A.
Gardinier
C. F.
1992
, “Unusually High Thermal Conductivity in Diamond Films
,” Applied Physics Letters
, Vol. 60
, pp. 1576
–1578
.5.
Goodson, K. E., Flik, M. I., Su, L. T., and Antoniadis, D. A., 1993, “Annealing-Temperature Dependence of the Thermal Conductivity of CVD Silicon-Dioxide Layers,” ASME HDT-Vol. 253, pp. 29–36.
6.
Grigoropoulos
C. P.
Dutcher
W. E.
Emery
A. F.
1991
a, “Experimental and Computational Analysis of CW Argon Laser Melting of Thin Silicon Films
,” ASME JOURNAL OF HEAT TRANSFER
, Vol. 113
, pp. 21
–29
.7.
Grigoropoulos
C. P.
Dutcher
W. E.
Barclay
K. E.
1991
b, “Radiative Phenomena in CW Laser Annealing
,” ASME JOURNAL OF HEAT TRANSFER
, Vol. 113
, pp. 657
–662
.8.
Grigoropoulos
C. P.
Park
H. K.
Xu
X.
1993
, “Modeling of Pulsed Laser Irradiation of Thin Silicon Films
,” International Journal of Heat and Mass Transfer
, Vol. 36
, No. 4
, pp. 919
–924
.9.
Harbeke
G.
Krausbauer
L.
Steigmeier
E. F.
Widmer
A. E.
Kappert
H. F.
Neugebauer
G.
1984
, “Growth and Physical Properties of LPCVD Polycrystalline Silicon Films
,” Journal of the Electrochemical Society
, Vol. 131
, pp. 675
–682
.10.
Howe, R. T., 1985, “Polycrystalline Silicon Micromachining,” in: Micromachining and Micropackaging of Transducers, C. D. Fung et al., eds., Elsevier, New York, pp. 169–187.
11.
Jacobsson, R., 1965, “Light Reflection From Films of Continuously Varying Refractive Index,” in: Progress in Optics, Vol. 5, E. Wolf, ed., North-Holland, Amsterdam, pp. 247–286.
12.
Jellison
G. E.
Modine
F. A.
1982
, “Optical Absorption of Silicon Between 1.6 and 4.7 eV at Elevated Temperatures
,” Applied Physics Letters
, Vol. 41
, pp. 180
–182
.13.
Jellison
G. E.
Burke
H. H.
1986
, “The Temperature Dependence of the Refractive Index of Silicon at Elevated Temperatures at Several Laser Wavelengths
,” Journal of Applied Physics
, Vol. 60
, No. 2
, pp. 841
–843
.14.
Kamins, T. I., 1988, Polycrystalline Silicon for Integrated Circuit Applications, Kluwer Academic Publishers, Boston.
15.
Knittl, Z., 1976, Optics of Thin Films, Wiley, Prague, Czechoslovakia, pp. 182–282.
16.
Krulevitch, P., Johnson, G. C., and Howe, R. T., 1992, “Stress and Microstructure in Phosphorus Doped Polycrystalline Silicon,” Material Research Society Symposium Proceedings, Vol. 276, pp. 79–84.
17.
Lambropoulos
J. C.
Jacobs
S. D.
Burns
S. J.
Shaw-Klein
L.
Hwang
S.-S.
1991
, “Thermal Conductivity of Thin Films: Measurement and Microstructural Effects
,” Thin Film Heat Transfer: Properties and Process
, ASME HTD-Vol. 184
, pp. 21
–31
.18.
Lompre
L. A.
Liu
J. M.
Kurz
H.
Bloembergen
N.
1983
, “Time-Resolved Temperature Measurement of Picosecond Laser Irradiated Silicon
,” Applied Physics Letters
, Vol. 43
, No. 2
, pp. 168
–170
.19.
Lowndes
D. H.
1982
, “Time-Resolved Optical Transmission and Reflectivity of Pulsed-Ruby-Laser Irradiated Crystalline Silicon
,” Physical Review Letters
, Vol. 48
, No. 4
, pp. 267
–271
.20.
Lowndes, D. H., and Jellison, G. E., Jr., 1984, “Time Resolved Measurements During Pulsed Laser Irradiation of Silicon,” in: Semiconductors and Semimetals, Vol. 23, R. F. Wood, C. W. White, and R. T. Young, ed., Academic, Orlando, pp. 313–404.
21.
Mastrangelo
C. H.
Muller
R. S.
1988
, “Thermal Diffusivity of Heavily Doped Low Pressure Chemical Vapor Deposited Polycrystalline Silicon Films
,” Sensors and Materials
, Vol. 3
, pp. 133
–142
.22.
Montaudon
P.
Debroux
M. H.
Ferrieu
F.
Vareille
A.
1985
, “Optical Characterization of Polycrystalline Silicon Before and After Thermal Oxidation
,” Thin Solid Films
, Vol. 125
, pp. 235
–241
.23.
Park
H. K.
Xu
X.
Grigoropoulos
C. P.
Do
N.
Klees
L.
Leung
P. T.
Tam
A. C.
1993
, “Transient Optical Transmission Temperature Measurement in Excimer-Laser Irradiation of Amorphous Silicon Films
,” ASME JOURNAL OF HEAT TRANSFER
, Vol. 115
, pp. 178
–183
.24.
Touloukian, Y. S., 1970, Thermophysical Properties of Matter: Thermal Conductivity, IFI/Plenum, New York.
25.
Tsaur, B. Y., 1986, “Assessment of Silicon on Insulator Technologies for VLSI,” Proceedings of the Materials Research Society, A. Chiang, et al., eds., Vol. 53, MRS, Pittsburgh, pp. 365–373.
26.
Xu
X.
Grigoropoulos
C. P.
1993
, “High Temperature Radiative Properties of Thin Polysilicon Films at the λ = 0.6328 μm Wavelength
,” International Journal of Heat and Mass Transfer
, Vol. 36
, No. 17
, pp. 4163
–4172
.27.
Xu
X.
Taylor
S. L.
Park
H. K.
Grigoropoulos
C. P.
1993
, “Transient Heating and Melting Transformation in Argon-Ion Laser Irradiation of Polysilicon Films
,” Journal of Applied Physics
, Vol. 73
, No. 12
, pp. 8088
–8096
.
This content is only available via PDF.
Copyright © 1995
by The American Society of Mechanical Engineers
You do not currently have access to this content.
