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Keywords: insulated gate bipolar transistors
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Journal Articles
Article Type: Research Papers
J. Electron. Packag. March 2011, 133(1): 011008.
Published Online: March 10, 2011
...Xiaoling Yu; Lianghua Zhang; Enming Zhou; Quanke Feng Presently, many methods are adopted to reduce the junction-to-case thermal resistance ( R jc ) of insulated-gate bipolar transistor (IGBT) modules in order to increase their power density. One of these approaches is to enhance the heat spreading...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. September 2010, 132(3): 031012.
Published Online: September 30, 2010
... joint below the Al bonding wire of the insulated gate bipolar transistor module and propagates by increasing the diameter. The effect of the bonding type on power cycling fatigue life is also discussed. The fracture process was found to depend on the type of bonding. Lead frame bonding was found...
Journal Articles
Article Type: Technical Papers
J. Electron. Packag. September 2007, 129(3): 316–323.
Published Online: May 18, 2007
...Robert G. Mertens; Louis Chow; Kalpathy B. Sundaram; R. Brian Cregger; Daniel P. Rini; Louis Turek; Benjamin A. Saarloos The popularity and increased usage of insulated gate bipolar transistors (IGBTs) in power control systems have made the problem of cooling them a subject of considerable interest...
Journal Articles
Article Type: Special Section On Therminic
J. Electron. Packag. December 2001, 123(4): 338–343.
Published Online: September 3, 2001
... by the EPPD September 3, 2001. Associate Editor: B. Courtois 03 September 2001 insulated gate bipolar transistors heat transfer semiconductor device packaging avionics Aircraft are increasingly using electronic systems to replace traditional mechanical, hydraulic, and pneumatic...