The thermal and the optoelectronic performance of high power gallium arsenide (GaAs) laser diode die-attached with sintered silver joint were investigated. The thermal and mechanical characteristics of the Laser bar packaging were simulated by finite element analysis (FEA). On the basis of prior experimental observations, voids in the bonding layer were intentionally introduced in the FEA model to examine their effect on the laser diode operating in the continuous-wave (CW) mode under different drive currents. The simulation results indicate that the quality of the bonding layer is very important to the heat dissipation capability of the packaging. Any void in the die-attach material would become a hotspot and thus deteriorate the optoelectronic performance of the laser diode. In addition, because of the coefficient of thermal expansion (CTE) mismatch between the laser bar and the copper heat sink, the interfacial thermomechanical stress will cause a noticeable curvature of the laser diode and a blueshift in the wavelength.
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December 2013
Research-Article
Effects of Voids in Sintered Silver Joint on Thermal and Optoelectronic Performances of High Power Laser Diode
Yi Yan,
Yi Yan
Department of Materials
Science and Engineering,
Science and Engineering,
Virginia Tech
,Blacksburg, VA 24061
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Youliang Guan,
Youliang Guan
Department of Engineering
Science and Mechanics,
Science and Mechanics,
Virginia Tech
,Blacksburg, VA 24061
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Xu Chen,
Xu Chen
1
School of Chemical
Engineering and Technology,
e-mail: xchen@tju.edu.cn
Engineering and Technology,
Tianjin University
,Tianjin 300072
, China
e-mail: xchen@tju.edu.cn
1Corresponding author.
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Guo-Quan Lu
Guo-Quan Lu
Department of Materials
Science and Engineering,
Science and Engineering,
Virginia Tech
,Blacksburg, VA 24061
Tianjin Key Laboratory of
Advanced Joining Technology,
School of Materials Science and Engineering,
Advanced Joining Technology,
School of Materials Science and Engineering,
Tianjin University
,Tianjin 300072
, China
Search for other works by this author on:
Yi Yan
Department of Materials
Science and Engineering,
Science and Engineering,
Virginia Tech
,Blacksburg, VA 24061
Youliang Guan
Department of Engineering
Science and Mechanics,
Science and Mechanics,
Virginia Tech
,Blacksburg, VA 24061
Xu Chen
School of Chemical
Engineering and Technology,
e-mail: xchen@tju.edu.cn
Engineering and Technology,
Tianjin University
,Tianjin 300072
, China
e-mail: xchen@tju.edu.cn
Guo-Quan Lu
Department of Materials
Science and Engineering,
Science and Engineering,
Virginia Tech
,Blacksburg, VA 24061
Tianjin Key Laboratory of
Advanced Joining Technology,
School of Materials Science and Engineering,
Advanced Joining Technology,
School of Materials Science and Engineering,
Tianjin University
,Tianjin 300072
, China
1Corresponding author.
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received April 19, 2013; final manuscript received July 11, 2013; published online September 4, 2013. Assoc. Editor: Shidong Li.
J. Electron. Packag. Dec 2013, 135(4): 041003 (6 pages)
Published Online: September 4, 2013
Article history
Received:
April 19, 2013
Revision Received:
July 11, 2013
Citation
Yan, Y., Guan, Y., Chen, X., and Lu, G. (September 4, 2013). "Effects of Voids in Sintered Silver Joint on Thermal and Optoelectronic Performances of High Power Laser Diode." ASME. J. Electron. Packag. December 2013; 135(4): 041003. https://doi.org/10.1115/1.4025247
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