Light emitting diodes (LEDs) historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors has allowed them to penetrate specialty and general illumination applications. The increased electrical currents used to drive the LEDs have resulted in higher heat fluxes than those for average silicon integrated circuits (i.e., ICs). This has created a need to focus more attention on the thermal management engineering of LED power packages. The output of a typical commercial high brightness, , LED has exceeded at drive levels approaching . This corresponds to a heat flux of up to . Novel thermal solutions need to address system architectures, packaging, phosphors for light color conversion, and encapsulants and fillers for optical extraction. In this paper, the effect of thermal management on packaging architectures, phosphors, encapsulants, and system design are discussed. Additionally, discussions of microscopic defects due to packaging problems as well as chip active layer defects are presented through experimental and computational findings.
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September 2007
Technical Papers
Chip to System Levels Thermal Needs and Alternative Thermal Technologies for High Brightness LEDS
Mehmet Arik,
Mehmet Arik
Thermal Systems Laboratory,
e-mail: arik@crd.ge.com
General Electric Company Global Research Center
, One Research Circle ES-102, Niskayuna, NY 12309
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Anant Setlur,
Anant Setlur
Optical Materials Laboratory,
General Electric Company Global Research Center
, One Research Circle, Bldg. K1-4A41, Niskayuna, NY 12309
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Stanton Weaver,
Stanton Weaver
Micro and Nano Structures Tech. Lab,
General Electric Company Global Research Center
, One Research Circle, Bldg. KW, B1432, Niskayuna, NY 12309
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Deborah Haitko,
Deborah Haitko
Electronic Materials Laboratory,
General Electric Company Global Research Center
, One Research Circle ES-102, Niskayuna, NY 12309
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James Petroski
James Petroski
GE Lumination
, 6180 Halle Drive, Valley View, OH 44125
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Mehmet Arik
Thermal Systems Laboratory,
General Electric Company Global Research Center
, One Research Circle ES-102, Niskayuna, NY 12309e-mail: arik@crd.ge.com
Anant Setlur
Optical Materials Laboratory,
General Electric Company Global Research Center
, One Research Circle, Bldg. K1-4A41, Niskayuna, NY 12309
Stanton Weaver
Micro and Nano Structures Tech. Lab,
General Electric Company Global Research Center
, One Research Circle, Bldg. KW, B1432, Niskayuna, NY 12309
Deborah Haitko
Electronic Materials Laboratory,
General Electric Company Global Research Center
, One Research Circle ES-102, Niskayuna, NY 12309
James Petroski
GE Lumination
, 6180 Halle Drive, Valley View, OH 44125J. Electron. Packag. Sep 2007, 129(3): 328-338 (11 pages)
Published Online: April 9, 2007
Article history
Received:
June 14, 2006
Revised:
April 9, 2007
Citation
Arik, M., Setlur, A., Weaver, S., Haitko, D., and Petroski, J. (April 9, 2007). "Chip to System Levels Thermal Needs and Alternative Thermal Technologies for High Brightness LEDS." ASME. J. Electron. Packag. September 2007; 129(3): 328–338. https://doi.org/10.1115/1.2753958
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