In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.
Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films
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Li, H, & Li, G. "Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films." Proceedings of the ASME 2011 International Mechanical Engineering Congress and Exposition. Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration. Denver, Colorado, USA. November 11–17, 2011. pp. 681-685. ASME. https://doi.org/10.1115/IMECE2011-64641
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