The results of numerical simulation of heat transfer phenomena in GaAs thin films irradiated by a pulsed laser are presented. A numerical algorithm involving a discontinuous Galerkin finite element method for the solution of hyperbolic heat conduction is used to solve the dual-phase-lag heat conduction equation The effects of different process parameters on heat propagation are analyzed. The heat conduction mode after pulsed laser irradiation is strongly dependent upon the incident laser energy density, film thickness and pulse duration. The heat transfer behavior for nano-, pico- and femto- second pulses has been studied and compared. A wave-type heat transfer phenomena was observed when pulse duration is of the order of relaxation time of the material being heated. It was found that for sub-picosecond pulses, the heat transfer occurs only by a thermal shock wave.
Numerical Simulation on Short Pulsed Laser Heating of Semiconductor Thin Films: The Case of GaAs
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Cheng, GJ, Pirzada, D, Ai, X, & Li, B. "Numerical Simulation on Short Pulsed Laser Heating of Semiconductor Thin Films: The Case of GaAs." Proceedings of the ASME 2006 International Mechanical Engineering Congress and Exposition. Heat Transfer, Volume 1. Chicago, Illinois, USA. November 5–10, 2006. pp. 241-252. ASME. https://doi.org/10.1115/IMECE2006-16214
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