Micro-PIV experiments rely upon the use of a microscope to achieve the higher spatial resolution. However, several optical limitations are introduced at these scales [1–3]. In addition, due to the low illumination levels, micro-PIV experiments require the use of either a cooled CCD camera or an image intensifier to provide increased signal-to-noise ratio. Although CCD cameras offer superior sensitivity and signal to noise ratio, intensified CMOS cameras offer an attractive alternative for performing high frequency measurements. However, intensified cameras are known to introduce artifacts such as added background noise. This study examines these issues and the feasibility of employing such technologies for microPIV through the use of the IDT-X5 intensified CMOS camera, capable of 500 Hz at a resolution of 2352×1728 pixels, with pulse separations as low as 2μs.
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ASME 2008 Fluids Engineering Division Summer Meeting collocated with the Heat Transfer, Energy Sustainability, and 3rd Energy Nanotechnology Conferences
August 10–14, 2008
Jacksonville, Florida, USA
Conference Sponsors:
- Fluids Engineering Division
ISBN:
978-0-7918-4841-8
PROCEEDINGS PAPER
Compensating for the Phosphorescent Persistence in Intensified Cameras for Micro-PIV
Adric Eckstein,
Adric Eckstein
Virginia Polytechnic Institute and State University, Blacksburg, VA
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Pavlos Vlachos
Pavlos Vlachos
Virginia Polytechnic Institute and State University, Blacksburg, VA
Search for other works by this author on:
Adric Eckstein
Virginia Polytechnic Institute and State University, Blacksburg, VA
Pavlos Vlachos
Virginia Polytechnic Institute and State University, Blacksburg, VA
Paper No:
FEDSM2008-55153, pp. 595-596; 2 pages
Published Online:
June 30, 2009
Citation
Eckstein, A, & Vlachos, P. "Compensating for the Phosphorescent Persistence in Intensified Cameras for Micro-PIV." Proceedings of the ASME 2008 Fluids Engineering Division Summer Meeting collocated with the Heat Transfer, Energy Sustainability, and 3rd Energy Nanotechnology Conferences. Volume 2: Fora. Jacksonville, Florida, USA. August 10–14, 2008. pp. 595-596. ASME. https://doi.org/10.1115/FEDSM2008-55153
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